Fermionics Opto-Technology offers Large Area InGaAs photodiodes for instrumentation and sensing applications. Responsivity in the wavelength regions 800 nm to 1700 nm is excellent. All of the devices listed are fabricated with planar-passivated technology; photosensitive surfaces are broadband AR-coated.
General purpose InGaAs PIN photodiode useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 µm in diameter.
FD500 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 25 | mA |
| Reverse Current | 5 | mA |
| Reverse Voltage | 20 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.85 |
0.90 0.95 |
A/W | |
| Dark Current (Id) |
Vr = 5V | 8 | 15 | nA | |
| Rise / Fall Time (Tr / Tf) |
Vr = 5V | 1 | 3 | ps | |
| Capacitance (C) |
Vr = 5V | 15 | 25 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD500W | 500 µm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window | 
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| FD500W-TO5 | 500 µm active diameter InGaAs photodiode mounted in TO5 header with flat AR coated window | 
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| FD500S2 | 500 µm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount | 
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| FD500S3 | 500 µm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount | 
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.
FD1000 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 100 | mA |
| Reverse Current | 20 | mA |
| Reverse Voltage | 2 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 850 nm λ = 1300 nm λ = 1550 nm |
0.10 0.80 0.85 |
0.20 0.90 0.95 |
A/W | |
| Shunt Resistance (Rs) | Vr = 0V | 2 | 20 | MΩ | |
| Capacitance (C) |
Vr = 0V | 80 | 150 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD1000W | 1 mm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD1000W-TO5 | 1 mm active diameter InGaAs photodiode mounted in TO5 header with flat AR coated window |
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| FD1000DL | 1 mm active diameter InGaAs photodiode mounted in TO46 header with dome lens | 
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| FD1000DL5 | 1 mm active diameter InGaAs photodiode mounted in TO5 header with dome lens | ||
| FD1000W-SMA | 1 mm active diameter InGaAs photodiode mounted in TO18 header with flat window, mounted in SMA-receptacle | ||
| FD1000W-FC | 1 mm active diameter InGaAs photodiode mounted in TO18 header with flat window, aligned in FC-connector receptacle with 2-hole flange | 
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| FD1000W-FCB | 1 mm active diameter InGaAs photodiode in TO18 header with flat window, aligned in PCB/panel mount FC-connector receptacle | 
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| FD1000W-SLB | 1 mm active diameter InGaAs photodiode in TO18 header with open window, aligned in FC-connector receptacle with 2-hole flange |
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| FD1000W-ST | 1 mm active diameter InGaAs photodiode in TO18 header with flat window, aligned in Radiall ST receptacle | 
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| FD1000S2 | 1 mm active diameter InGaAs photodiode mounted on type S2 alumina ceramic submount |
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| FD1000S3 | 1 mm active diameter InGaAs photodiode mounted on type S3 alumina ceramic submount |
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing application. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.
FD1500 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 100 | mA |
| Reverse Current | 20 | mA |
| Reverse Voltage | 2 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 850 nm λ = 1300 nm λ = 1550 nm |
0.10 0.80 0.85 |
0.20 0.90 0.95 |
A/W | |
| Shunt Resistance (Rs) | Vr = 0V | 2 | 10 | MΩ | |
| Capacitance (C) |
Vr = 0V | 300 | 450 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD1500W | 1.5 mm active diameter InGaAs photodiode mounted in TO18 header with flat AR coated window |
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| FD1500W-SMA | 1.5 mm active diameter InGaAs photodiode mounted in TO18 header with flat window, mounted in SMA-receptacle | ||
| FD1500W-FC | 1.5 mm active diameter InGaAs photodiode mounted in TO18 header with flat window, aligned in FC-connector receptacle with 2-hole flange |
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing application. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.
FD2000 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 50 | mA |
| Reverse Current | 10 | mA |
| Reverse Voltage | 2 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 850 nm λ = 1300 nm λ = 1550 nm |
0.10 0.80 0.85 |
0.20 0.90 0.95 |
A/W | |
| Shunt Resistance (Rs) | Vr = 0V | 2 | 10 | MΩ | |
| Capacitance (C) |
Vr = 0V | 400 | 1000 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD2000W | 2 mm active diameter InGaAs photodiode mounted in TO5 header with flat AR coated window |
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing application. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low optical signals. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.
FD3000 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 50 | mA |
| Reverse Current | 10 | mA |
| Reverse Voltage | 2 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.90 |
0.90 0.95 |
A/W | |
| Shunt Resistance (Rs) | Vr = 0V | 1000 | 2000 | kΩ | |
| Capacitance (C) |
Vr = 0V | 750 | 1800 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD3000W | 3 mm active diameter InGaAs photodiode mounted in TO5 header with flat AR coated window |
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| FD3000W-TO8 | 3 mm active diameter InGaAs photodiode mounted in TO8 header with flat AR coated window. | 
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing application. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5 mm in diameter. Planar-passivated device structure.
FD5000 Chip Series Spec SheetAbsolute Maximum Ratings
| Parameter | Ratings | Units |
|---|---|---|
| Storage Temperature | -40 to +100 | °C |
| Operating Temperature | -40 to +85 | °C |
| Forward Current | 100 | mA |
| Reverse Current | 10 | mA |
| Reverse Voltage | 1 | V |
Optical and Electrical Characteristics (T = 25°C)
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Responsivity (R) |
λ = 1300 nm λ = 1550 nm |
0.80 0.90 |
0.90 0.95 |
A/W | |
| Shunt Resistance (Rs) | Vr = 0V | 100 | 500 | kΩ | |
| Capacitance (C) |
Vr = 0V | 2000 | 3500 | pF |
Package Options
| Part Number | Part Description | ||
|---|---|---|---|
| FD5000W | 5 mm active diameter InGaAs photodiode mounted in TO8 header with flat AR coated window. |
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